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Photoacoustic and X‐ray Studies on H + Ion Implanted n ‐GaAs
Author(s) -
Roy S. D. D.,
Sankar N.,
Ramachandran K.,
Raji P.,
Vivekanandan T. S.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200211)37:11<1215::aid-crat1215>3.0.co;2-v
Subject(s) - ion , photoacoustic imaging in biomedicine , materials science , x ray , analytical chemistry (journal) , atomic force microscopy , ion implantation , strain (injury) , chemistry , nanotechnology , optics , physics , organic chemistry , chromatography , medicine
Qualitative and quantitative analysis on the defects in H + ion implanted (30keV with doses 10 14 , 10 15 , 10 16 and 10 17 ions/cm 2 ) n ‐GaAs are carried out here by Atomic Force Microscopy (AFM), XRD and Photoacoustic measurements, for various doses. The close agreement between these measurements reveal that even the microscopic strain parameter ∈ 1 (from XRD) can be viewed microscopically with photoacoustics. Various thermal parameters are computed for the 30 keV H + ion implanted n ‐GaAs and reported for the first time.