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Carrier Transport Properties of InS Single Crystals
Author(s) -
Qasrawi A. F.,
Gasanly N. M.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200210)37:10<1104::aid-crat1104>3.0.co;2-a
Subject(s) - hall effect , charge carrier , indium , impurity , effective mass (spring–mass system) , electrical resistivity and conductivity , scattering , conduction band , materials science , atmospheric temperature range , condensed matter physics , electron mobility , phonon , carrier scattering , thermal conduction , chemistry , optoelectronics , optics , physics , electron , organic chemistry , quantum mechanics , meteorology , composite material
The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature‐dependent Hall effect measurements revealed a carrier effective mass of 0.95 m 0 , a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.