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Impedance and Electric Modulus Analysis of Cd 0.6 Zn 0.4 Te Thin Films
Author(s) -
Prabakar K.,
Narayandass Sa. K.,
Mangalaraj D.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200210)37:10<1094::aid-crat1094>3.0.co;2-z
Subject(s) - grain boundary , activation energy , electrical impedance , materials science , thermal conduction , capacitance , thin film , crystallite , modulus , condensed matter physics , analytical chemistry (journal) , composite material , chemistry , microstructure , electrical engineering , metallurgy , physics , nanotechnology , organic chemistry , electrode , chromatography , engineering
Cd 0.6 Zn 0.4 Te thin films were deposited by single source vacuum evaporation technique. The impedance of polycrystalline Cd 0.6 Zn 0.4 Te thin films has been measured as a function of frequency. The experimental data were measured in the temperature range of 300 – 445K and have been analyzed in the complex plane formalism and suitable equivalent circuits have been proposed in different regions. The values of resistance and capacitance of bulk and grain boundary contributions have also independently calculated from the peak of spectroscopic plots. The role of bulk and grain boundary in the overall conduction process has been discussed with realistic justification. The frequency analysis of ac conduction properties showed distribution of relaxation times due to the presence of multiple grain boundaries in the films. The activation energy calculated from the complex impedance analyses was found to be 0.29eV. The values of activation energies decrease with increase in frequency and are in agreement with that calculated from the impedance plot.