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Electrical Properties of CuIn 3 Se 5 Bulk Crystal at Low Temperature
Author(s) -
Hernández E.,
López Pescador A.,
Durante Rincón C. A.,
León M.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200210)37:10<1088::aid-crat1088>3.0.co;2-d
Subject(s) - impurity , tetragonal crystal system , atmospheric temperature range , analytical chemistry (journal) , hall effect , electrical resistivity and conductivity , stoichiometry , scattering , materials science , diffraction , ionized impurity scattering , chemical composition , powder diffraction , phase (matter) , chemistry , crystal structure , crystallography , optics , thermodynamics , physics , engineering , chromatography , electrical engineering , organic chemistry
CuIn 3 Se 5 crystals were grown from the melt containing stoichiometric quantities of the elements of at least 5 N purity. The structure was analyzed by X‐ray powder diffraction, and shows mainly a tetragonal single phase. The chemical composition was determined by EDAX and Total X‐Ray Fluorescence (TXRF). The conductivity and the Hall effect have been measured in the temperature range from 10 to 300 K. The polar optical scattering was found to dominate at low temperatures, while in the high temperature region ionized impurity scattering mechanism was observed.