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Physical Model of Paths of Microdefects Nucleation in Dislocation‐Free Single Crystals Float‐Zone Silicon
Author(s) -
Talanin V. I.,
Talanin I. E.,
Levinson D. I.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200209)37:9<983::aid-crat983>3.0.co;2-n
Subject(s) - nucleation , silicon , dislocation , materials science , float (project management) , crystallography , condensed matter physics , composite material , chemistry , thermodynamics , optoelectronics , physics , engineering , marine engineering
With the help of selective etching, transmission electron microscopy complex researches of non‐doped dislocation‐free single crystals of float‐zone silicon by a diameter of 30 mm were conducted. The crystals were obtained with various growth rates and were subjected to various kinds of technological effects. Is established that the process of microdefects formation in silicon proceeds simultaneously on two independent mechanisms:vacancy and interstitial. The physical model of formation of microdefects in dislocation‐free monocrystals of FZ silicon is offered.