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Structure of SiC‐Quantum Wells Studied by TEM and CBED
Author(s) -
Kaiser U.,
Kups Th.,
Fissel A.,
Richter W.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200205)37:5<466::aid-crat466>3.0.co;2-i
Subject(s) - electron diffraction , molecular beam epitaxy , materials science , hexagonal crystal system , diffraction , quantum well , lattice (music) , crystallography , condensed matter physics , high resolution , epitaxy , optics , optoelectronics , chemistry , nanotechnology , physics , geology , layer (electronics) , laser , remote sensing , acoustics
Multi‐quantum well structures of 3C/4H‐SiC polytypes grown either on stepped or on on‐axis hexagonal SiC by molecular beam epitaxy have been investigated by conventional and high resolution TEM. The 3C‐SiC layers were nearly free of defects and the interface between different polytypes was abrupt. For the 3C‐SiC layers the strain state and the lattice parameters have been investigated to a high accuracy by convergent beam electron diffraction (CBED).