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Properties of GeSi Nanocrystals Embedded in Hexagonal SiC
Author(s) -
Kaiser U.,
Biskupek J.,
Muller D.A.,
Gärtner K.,
Schubert Ch.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200204)37:4<391::aid-crat391>3.0.co;2-y
Subject(s) - nanocrystal , materials science , hexagonal crystal system , spectroscopy , quantum dot , transmission electron microscopy , scanning transmission electron microscopy , high resolution transmission electron microscopy , lattice (music) , electron energy loss spectroscopy , resolution (logic) , chemical physics , molecular dynamics , nanotechnology , condensed matter physics , molecular physics , crystallography , chemistry , physics , computational chemistry , quantum mechanics , artificial intelligence , computer science , acoustics
In this paper high‐resolution electron microscopy investigations and molecular dynamics simulations of GeSi nanocrystals buried in 4H ‐SiC are performed, showing that the experimentally observed shapes of the GeSi nanocrystals are strongly correlated with their orientational relationships. Measurements of the lattice spacing suggest that the nanocrystals are strained. Quantum confinement in selected nanocrystals has been detected using spatially‐resolved electron energy loss spectroscopy performed in conjunction with atomic resolution annular dark‐field scanning TEM.