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Microstructural Characterization of Electrosynthesized ZnTe Thin Films
Author(s) -
Mahalingam T.,
John V.S.,
Ravi G.,
Sebastian P.J.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200204)37:4<329::aid-crat329>3.0.co;2-u
Subject(s) - materials science , crystallite , scanning electron microscope , dislocation , thin film , stacking fault , diffraction , characterization (materials science) , composite material , crystallography , analytical chemistry (journal) , optics , nanotechnology , metallurgy , chemistry , physics , chromatography
Thin films of zinc telluride (ZnTe) were electrosynthesized on tin oxide coated conducting glass substrates at various bath temperatures. The deposited films were characterized by x‐ray diffraction (XRD) and scanning electron microscopy (SEM). The structure was found to be cubic with preferential orientation along (111) plane. X‐ray line profile analysis technique by the method of the variance has been used to evaluate the microstructural parameters. The variation of different microstructural parameters such as, crystallite size, RMS strain, dislocation density and stacking fault probability affecting the fraction of planes with film thickness and bath temperatures were studied. The experimental observations are discussed in detail.