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Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures
Author(s) -
Vorlícek V.,
Moiseev K.D.,
Mikhailova M.P.,
Yakovlev Yu.P.,
Hulicius E.,
Šimecek T.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200202)37:2/3<259::aid-crat259>3.0.co;2-u
Subject(s) - raman spectroscopy , raman scattering , heterojunction , epitaxy , spectral line , materials science , solid solution , lattice (music) , alloy , substrate (aquarium) , crystallography , chemistry , analytical chemistry (journal) , condensed matter physics , optoelectronics , optics , nanotechnology , physics , metallurgy , geology , oceanography , layer (electronics) , chromatography , astronomy , acoustics
Ga 1‐x In x As y Sb 1‐y quaternary solid solutions lattice‐ matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs‐like and (GaSb+InAs)‐like mixture modes is discussed. The modified REI model developed by JAW et al. seems to describe the observed behaviour reasonably. Possibility of determination of the alloy composition from Raman spectra is considered.