Premium
Characterization of a‐SiC:H Films Deposited by RF Plasma CVD
Author(s) -
Kim Y.T.,
Hong B.,
Jang G.E.,
Suh S.J.,
Yoon D.H.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200202)37:2/3<219::aid-crat219>3.0.co;2-9
Subject(s) - annealing (glass) , amorphous solid , materials science , silicon carbide , diffraction , plasma , analytical chemistry (journal) , atomic force microscopy , carbide , x ray crystallography , chemical vapor deposition , amorphous silicon , crystallography , chemical engineering , silicon , nanotechnology , optoelectronics , composite material , chemistry , optics , crystalline silicon , organic chemistry , physics , engineering , quantum mechanics
The effects of annealing temperature on the structure of hydrogenated amorphous silicon carbide (a‐SiC:H) films prepared by RF plasma CVD were investigated by using X‐ray diffraction, UV‐VIS spectrophotometer and atomic force microscopy techniques. It was found that an annealing process results in structural rearrangement. The amorphous phase transforms into the crystalline β ‐SiC phase at an annealing temperature of approximately 900°C.