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Effect of Electrical Field and Temperature on the Crystal Growth Rates of Boric Acid
Author(s) -
Sahin Ö.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200202)37:2/3<183::aid-crat183>3.0.co;2-9
Subject(s) - boric acid , chemistry , analytical chemistry (journal) , crystallization , supersaturation , diffusion , activation energy , atmospheric temperature range , reaction rate constant , electrical resistivity and conductivity , thermodynamics , electric field , kinetic energy , kinetics , chromatography , electrical engineering , organic chemistry , physics , quantum mechanics , engineering
Growth rates of boric acid have been measured both in the absence and in the presence of electrical field at 1.00 DC voltage as a function of supersaturation in a laboratory‐scale fluidized bed crystallizer at the temperature range of 20 °C to 52 °C. The values of overall rate coefficient (K G ), diffusion rate coefficient (k d ), reaction rate constant (k r ) and reaction order (r) were determined by trail and error method at different temperatures. In the absence of electrical field increasing the temperature causes to increase the values of K G , k d , k r and r.. Activation energies are also determined for K G , k r and k d separately. The effect of electrical field on the crystallization steps were determined by similar route. It was observed that electrical field caused to decrease the values of kinetic parameters (K G , k d , k r and r) by increasing temperature.