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MOVPE GaN Grown on Alternative Substrates
Author(s) -
Paszkiewicz R.,
Paszkiewicz B.,
Korbutowicz R.,
Kozlowski J.,
Tlaczala M.,
Bryja L.,
Kudrawiec R.,
Misiewicz J.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200110)36:8/10<971::aid-crat971>3.0.co;2-b
Subject(s) - metalorganic vapour phase epitaxy , materials science , chemistry , nanotechnology , optoelectronics , epitaxy , layer (electronics)
The structure, morphology and optical properties of GaN films deposited by metalorganic vapour phase epitaxy (MOVPE) on alternative substrates: ZnO, NdGaO, YSZ (yttria stabilized zirconia). Scanning electron microscopy, X‐ray diffraction and photoluminescence were used for the epitaxial layers characterisation. The obtained results have been compared to those of GaN layers grown on c‐plane sapphire substrates. It was established that the most important step towards the realisation of device quality GaN material on alternative substrates is the first stage of the growth process.