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Chemical Vapor Deposition of Diamond Films in Hot Filament Reactor
Author(s) -
Grus M.,
JankowskaFrydel A.,
Bohdanowicz J.,
Zawada K.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200110)36:8/10<961::aid-crat961>3.0.co;2-f
Subject(s) - chemical vapor deposition , diamond , raman spectroscopy , electron paramagnetic resonance , dangling bond , carbon film , scanning electron microscope , substrate (aquarium) , material properties of diamond , materials science , silicon , analytical chemistry (journal) , carbon fibers , chemical engineering , thin film , chemistry , nanotechnology , composite material , optoelectronics , organic chemistry , nuclear magnetic resonance , optics , oceanography , physics , engineering , geology , composite number
Diamond films of different quality have been synthesized by hot filament chemical vapor deposition (HF CVD) methods from a mixture of hydrogen and hydrocarbon gases. Thin polycrystalline films deposited on silicon substrate were studied using Raman spectroscopy, scanning electron microscopy (SEM) and electron paramagnetic resonance (EPR) technique. Nonuniform distribution of substrate temperatures yields to growth of diamond films in a variety of ways and affects on various types of carbon structures and different kind of defects. The Raman peak shifts to wave number higher than 1332 cm ‐1 what corresponds to a compressive stress in the range of ‐0.49 to ‐1.87 GPa. Two EPR centres with g = 2.003 and ΔH pp equal to 0.65 and 1.2 mT originate from carbon dangling bonds in diamond and in non‐diamond phase, respectively.