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Infrared and Photoluminescence Studies on Silicon Oxide Formation in Oxygen‐Implanted Silicon Annealed Under Enhanced Pressure
Author(s) -
Surma B.,
Bryja L.,
Misiuk A.,
Gawlik G.,
Jun J.,
Antonova I. V.,
Prujszczyk M.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200110)36:8/10<943::aid-crat943>3.0.co;2-f
Subject(s) - photoluminescence , hydrostatic pressure , silicon , annealing (glass) , materials science , oxygen , infrared , silicon oxide , analytical chemistry (journal) , infrared spectroscopy , oxide , molecular vibration , raman spectroscopy , chemistry , optoelectronics , optics , composite material , silicon nitride , metallurgy , physics , organic chemistry , chromatography , thermodynamics
Influence of hydrostatic pressure (HP) on the evolution of Si‐O bond states during annealing (HT) in implanted (dose 10 15 – 6 x 10 17 at/cm 2 ) Si:O structures was studied by monitoring the features of absorption band associated with Si‐O‐Si asymmetric stretching mode and defect‐related photoluminescence (PL) measurements in the near infrared region. It has been stated that high pressure (HP) treatment significantly changes the defect structure in implanted layer at T ≥ 1130 °C, resulting in the shift of asymmetric stretching vibration mode associated with Si‐O bonds towards lower frequencies. Stimulation role of hydrostatic pressure in the generation of Si‐O bonds in Si:O structures implanted with low doses of oxygen atoms (10 15 –10 16 at/cm 2 ) and treated at lower temperatures was found.