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Growth and Electric Transport of Ca‐doped PrBa 2 Cu 3 O 7‐ δ Single Crystals
Author(s) -
Luszczek M.,
Sadowski W.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200110)36:8/10<917::aid-crat917>3.0.co;2-b
Subject(s) - electrical resistivity and conductivity , doping , analytical chemistry (journal) , stoichiometry , flux method , crystal (programming language) , materials science , crystal growth , single crystal , electric resistivity , flux (metallurgy) , mineralogy , crystallography , chemistry , metallurgy , programming language , optoelectronics , chromatography , computer science , electrical engineering , engineering
Abstract Crystal growth of Ca‐doped PrBa 2 Cu 3 O 7‐ δ(Pr‐123) single crystals by slow cooling of Pr 3 O 11 ‐CaCO 3 ‐BaCO 3 ‐CuO melts (self‐flux technique) in ambient air atmosphere was studied. As the first approach the growth of Ca‐free crystals in Al 2 O 3 and ZrO 2 crucibles was investigated. The best quality crystals with the average size of 5 x 5 x 0.2mm 3 were obtained from Al 2 O 3 crucibles for Ba/Cu = 0.41 and 15 wt.% (2.41 mol.%) of stoichiometric Pr‐123 solute in the melt. Next, using CaCO 3 as calcium source (0.09 ‐12.68 wt.%), the good quality Pr 1‐x Ca x Ba 2 Cu 3 O 7‐ δcrystals with 0 ≤ x ≤ 0.26 were grown in the Al 2 O 3 crucibles from the solution with fixed value of Ba/Cu = 0.41. The oxygenated single crystals with size up to 5 x 8 x 0.2 mm 3 were used for electric transport investigations from four‐probe resistivity measurements. The temperature dependence of resistivity of Ca‐doped Pr‐123 crystals is typical for systems with locallized states and, in principle, follows the Mott law for variable‐range hopping (VRH).