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X‐ray Diffraction Study of Composition Inhomogeneities in Ga 1– x In x N Thin Layers
Author(s) -
ZielinskaRohozanska E.,
Gronkowski J.,
Regulska M.,
Majer M.,
Pakula K.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200110)36:8/10<903::aid-crat903>3.0.co;2-v
Subject(s) - reciprocal lattice , diffraction , materials science , metalorganic vapour phase epitaxy , ternary operation , sapphire , bilayer , thin film , epitaxy , x ray crystallography , crystallography , analytical chemistry (journal) , optics , chemistry , physics , nanotechnology , layer (electronics) , laser , biochemistry , chromatography , membrane , computer science , programming language
Inhomogeneities due to alloy fluctuations in MOCVD grown Ga 1– x In x N thin films in the compositional range 0 < x ≤ 0.093, deposited on GaN sublayers grown on c sapphire plane, are investigated. InGaN films are analyzed by x‐ray diffraction profiles and reciprocal space maps in the triple‐axis mode. Films grown with the lower In content ( x ≤ 0.085) reveal compositional inhomogeneity as a single extra peak in the diffraction rocking curve which can be attributed to local bilayer growth of the ternary. Films grown with the higher In content exhibit both a smearing of diffraction profiles (quasi‐continuous compositional changes) and development of multiple peaks that corresponds to local‐domain growth. Non‐uniform epitaxial growth results in a composition distribution of the ternary, derived by x‐ray measurements, which is compatible with the value of composition obtained from RBS characterization.