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Growth and Electrical Properties of New Semiconductor Compound ZnCdHgTe
Author(s) -
Khlyap G.,
Sydorchuk P.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200110)36:8/10<1027::aid-crat1027>3.0.co;2-c
Subject(s) - heterojunction , semiconductor , cadmium telluride photovoltaics , compound semiconductor , optoelectronics , materials science , epitaxy , crystal growth , charge carrier , condensed matter physics , chemistry , nanotechnology , crystallography , physics , layer (electronics)
Growth technology and electric properties of the new semiconductor compound ZnCdHgTe obtained by modified liquid phase epitaxy technique on (111) CdTe single crystal substrates are described. Principal attention is focused on current‐voltage characteristics of the heterostructures Zn x Cd y Hg 1‐x‐y Te/CdTe. The mechanism of carriers transfer, in particular, multi‐mode regime governed by the charge states localized at the interface, is studied. Results of numerical experiment performed for the first time for examined heterostructures are in good qualitative and quantitative agreement with the data of electric measurements.