Premium
Study of AlGaAs Laser Heterostructures with Multiquantum Well Active Region Grown by low Temperature Liquid Phase Epitaxy
Author(s) -
Prutskij T.,
Díaz Arencibia P.,
Silva Andrade F.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200106)36:4/5<395::aid-crat395>3.0.co;2-e
Subject(s) - materials science , epitaxy , heterojunction , supercooling , atmospheric temperature range , optoelectronics , laser , photoluminescence , quantum well , scanning electron microscope , optics , nanotechnology , composite material , physics , layer (electronics) , meteorology , thermodynamics
In this paper we describe the growth and characteristics of AlGaAs/GaAs laser structures with 2, 3, and 4 quantum wells in their active region fabricated by Low‐Temperature Liquid Phase Epitaxy (LT‐LPE) technique. The technique uses a piston boat and the temperatures of crystallization are in the 400‐600°C range. Scanning Electron Microscope and Photoluminescence experiments show the good planarity and reproducibility of these structures. It is shown that the thickness of the QW layers depend on the supercooling temperature for a given growth time and temperature.