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Growth and Some Properties of Heterostructures Based on New Narrow‐Gap Semiconductor ZnCdHgTe
Author(s) -
Sydorchuk P.,
Khlyap G.,
Andrukhiv A.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200106)36:4/5<361::aid-crat361>3.0.co;2-5
Subject(s) - heterojunction , semiconductor , compound semiconductor , materials science , semiconductor materials , lattice (music) , band gap , optoelectronics , nanotechnology , condensed matter physics , physics , epitaxy , layer (electronics) , acoustics
Growth technology of new narrow‐gap semiconductor solid solution ZnCdHgTe proposed as an alternative material to CdHgTe due to the stabilizing effect of Zn‐Hg bond in the lattice of the compound is presented. Results of electrical examinations performed at the first time for the heterostructures based on ZnCdHgTe are also reported.