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Transmission Electron Microscopical Studies of the Layered Structure of the Ternary Semiconductor CuIn 5 Se 8
Author(s) -
Tham A.T.,
Su D.S.,
Neumann W.,
SchubertBischoff P.,
Beilharz C.,
Benz K.W.
Publication year - 2001
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200103)36:3<303::aid-crat303>3.0.co;2-x
Subject(s) - stacking , transmission electron microscopy , ternary operation , crystallography , electron diffraction , stoichiometry , materials science , crystal structure , phase (matter) , semiconductor , electron microscope , high resolution transmission electron microscopy , layer (electronics) , resolution (logic) , diffraction , hexagonal crystal system , chemistry , optics , nanotechnology , optoelectronics , physics , organic chemistry , artificial intelligence , computer science , programming language
The structure of the off‐stoichiometric In‐rich ternary phase CuIn 5 Se 8 was studied by means of electron diffraction and high‐resolution electron microscopy. The compound shows a layered structure with a 7‐layer stacking sequence of closed‐packed planes, which contains both cubic and hexagonal stacking of Se atoms. The studied CuIn 5 Se 8 bulk crystal is known as the β‐phase of this compound.