Premium
TEM Investigation on Micro‐Inclusions and Dislocations in a HPHT‐Grown Diamond Single Crystal from Ni‐C System
Author(s) -
Yin L.W.,
Zou Z.D.,
Li M.S.,
Geng G.L.,
Sun D.S.,
Hao Z.Y.,
Yao Z.Y.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200011)35:11/12<1289::aid-crat1289>3.0.co;2-w
Subject(s) - diamond , materials science , dislocation , diamond type , transmission electron microscopy , amorphous solid , pyrophyllite , microstructure , material properties of diamond , inclusion (mineral) , crystallography , graphite , single crystal , crystal (programming language) , composite material , mineralogy , nanotechnology , chemistry , computer science , programming language
Abstract In this paper, microstructures of diamond single crystal grown from Ni‐C system under high temperature and high pressure (HPHT) were examined by transmission electron microscopy (TEM). It was shown that there exist growth defects such as micro‐inclusions, dislocation networks, an array of dislocations and dislocation pileup in the diamond. The formation process and characteristics of these defects were analyzed briefly. The micro‐inclusions are composed of hexagonal Ni 3 C, hexagonal SiO 2 and amorphous graphite, which may be derived from the starting materials and the medium (pyrophyllite) for transmitting the pressure. The dislocations are related to internal stress in the diamond, which may be correlative with the micro‐inclusions in the diamond.