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Physical Properties of Zinc Oxide Films Prepared by dc Reactive Magnetron Sputtering at Different Sputtering Pressures
Author(s) -
Subramanyam T.K.,
Srinivasulu Naidu B.,
Uthanna S.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200010)35:10<1193::aid-crat1193>3.0.co;2-6
Subject(s) - sputtering , zinc , sputter deposition , materials science , oxide , zinc compounds , chemical engineering , optoelectronics , metallurgy , thin film , nanotechnology , engineering
Thin films of zinc oxide were deposited by dc reactive magnetron sputtering onto glass substrates held at a temperature of 663 K and oxygen partial pressure of 1x10 ‐3 mbar, and at different sputtering pressures in the range 3x10 ‐2 ‐ 10x10 ‐2 mbar. The effect of sputtering pressure on the structural, electrical and optical properties of the films were systematically studied. The films were polycrystalline in nature with preferred (002) orientation. The temperature dependence of Hall mobility indicated that the grain boundary scattering of the charge carriers are predominant in these films. The films formed at a sputtering pressure of 6x10 ‐2 mbar showed a low electrical resistivity of 6.9x10 ‐2 Ohm cm, optical transmittance of 83% with an optical band gap of 3.28 eV.