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A Study on Carbon Incorporation in Semi‐Insulating GaAs Crystals Grown by the Vapor Pressure Controlled Czochralski Technique (VCz) Part I: Experiments and Results
Author(s) -
Jacob K.,
Frank Ch.,
Neubert M.,
Rudolph P.,
Ulrici W.,
Jurisch M.,
Korb J.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200010)35:10<1163::aid-crat1163>3.0.co;2-c
Subject(s) - graphite , getter , materials science , czochralski method , carbon fibers , vapor pressure , analytical chemistry (journal) , gallium , impurity , titanium , oxide , chemistry , metallurgy , optoelectronics , composite material , silicon , chromatography , organic chemistry , composite number
In the past it has been demonstrated that the carbon concentration of large semi‐insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the present paper to clarify which of the relationships of LEC growth could be used for a carbon control in the VCz‐method characterized by the application of an inner chamber made from graphite to avoid selective As evaporation. In detail this comprised a study of the influence of several growth parameters like the water content of the boric oxide, the composition of the working atmosphere, the gas flow, a titanium gettering and additions of gallium oxide. As a result, for the first time carbon concentrations down to ≈ 1014 cm ‐3 were obtained in 3'' (75 mm) diameter VCz crystals.