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Electrical and Photoelectrical Properties of Vacuum Deposited SnSe Thin Films
Author(s) -
Pathinettam Padiyan D.,
Marikani A.,
Murali K.R.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200008)35:8<949::aid-crat949>3.0.co;2-r
Subject(s) - photoconductivity , materials science , thin film , electrical resistivity and conductivity , crystallinity , crystallite , annealing (glass) , band gap , vacuum deposition , conductivity , optoelectronics , lead selenide , composite material , nanotechnology , chemistry , metallurgy , electrical engineering , engineering
Polycrystalline thin films of tin selenide have been prepared by vacuum deposition at a substrate temperature of 150°C and reported. X‐ray diffraction, optical transmission, electrical conductivity and photoconductivity studies have been carried out on these films. Annealing the films at 300°C for 2 hours improves the crystallinity and a preferred orientation along the (111) plane develops. The optical transmission measurement reveals that the SnSe thin films have a direct allowed band gap of 1.26 eV. Electrical conductivity study shows that the conductivity increases with increasing temperature. The observed electrical conductivity at low temperature is explained based on hopping conduction mechanism. The photoconductivity measurement indicates the presence of continuously distributed deep localised gap states in this material.