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{110} and {111} Ordering in MOVPE‐grown (Ga,In)P on (001) GaAs Substrates at Low Temperature
Author(s) -
Hähnert I.,
Knauer A.,
Schneider R.,
Rechenberg I.,
Klein A.,
Neumann W.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200007)35:6/7<831::aid-crat831>3.0.co;2-v
Subject(s) - misorientation , metalorganic vapour phase epitaxy , stacking , transmission electron microscopy , electron diffraction , materials science , epitaxy , crystallography , microstructure , diffraction , lattice (music) , doping , metal , chemistry , nanotechnology , optoelectronics , optics , layer (electronics) , metallurgy , physics , grain boundary , organic chemistry , acoustics
The microstructure of (Ga,In)P layers grown by metal organic vapour phase epitaxy (MOVPE) at 580°C was characterized by transmission electron microscopy (TEM), especially by electron diffraction (TED). In lattice‐matched (Ga,In)P layers grown on exactly oriented (001) GaAs substrates or low misoriented ones additional intensity maxima occur at about 1/2 1/2 0 interpreted as ordering parallel to {110}. The {110} ordering is present in both undoped and doped layers. The well‐known (1‐11) ordering was detected in layers grown on (001) substrates with larger misorientation (2° off to {111}B). For the various ordering types a model was developed on the basis of stacking of ordered (001) planes as a kind of polytypism.