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Heteroepitaxy of Large‐Misfit Systems: Role of Coincidence Lattice
Author(s) -
Trampert A.,
Ploog K.H.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200007)35:6/7<793::aid-crat793>3.0.co;2-3
Subject(s) - epitaxy , lattice (music) , coincidence , transmission electron microscopy , materials science , condensed matter physics , crystallography , nanotechnology , chemistry , physics , medicine , alternative medicine , pathology , acoustics , layer (electronics)
We present a detailed study about the epitaxial growth of various modern materials systems with large lattice misfit to GaAs substrates. The epitaxial alignment during the initial stage of growth and the misfit accommodation process are determined by the particular interface structures which we have investigated by high‐resolution transmission electron microscopy. The results are explained with an extended coincidence lattice model and its general applicability to heteroepitaxial growth of large‐misfit systems is discussed.