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In Situ HREM Irradiation Study of an Intrinsic Point Defects Clustering in FZ‐Si
Author(s) -
Fedina L.,
Gutakovskii A.,
Aseev A.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200007)35:6/7<775::aid-crat775>3.0.co;2-3
Subject(s) - crystallographic defect , materials science , vacancy defect , crystallography , irradiation , electron beam processing , in situ , relaxation (psychology) , electron microscope , condensed matter physics , lattice (music) , frenkel defect , molecular physics , chemical physics , chemistry , optics , physics , psychology , social psychology , organic chemistry , nuclear physics , acoustics
Various extended defects produced by in situ electron irradiation in a high resolution electron microscope (JEOL 4000EX ) at room temperature on {113} and {111} habit planes are reviewed on the base of the results recently obtained. It was observed that both interstitials and vacancies tend to aggregate in the shape of <110>‐oriented chain‐like defects on {113}, in addition to well‐known rod‐like defect of interstitial type. These defects are characterized by a different magnitude and opposite type of lattice relaxation introduced in surrounding. <110>‐oriented interstitial chains are also formed by agglomeration of interstitials to the core of vacancy or interstitial Frank partial dislocations to provide a relaxation of the strongly deformed crystal areas.