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Quantum Dot Structures in the InGaAs System Investigated by TEM Techniques
Author(s) -
Werner P.,
Scheerschmidt K.,
Zakharov N.D.,
Hillebrand R.,
Grundmann M.,
Schneider R.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200007)35:6/7<759::aid-crat759>3.0.co;2-w
Subject(s) - quantum dot , diffraction , materials science , image contrast , lattice (music) , electron diffraction , energy minimization , nanotechnology , quantum , quantum chemical , contrast (vision) , optoelectronics , physics , chemical physics , optics , molecule , quantum mechanics , acoustics
Quantum dot structures have gained increasing interest in materials science due to their special electrical and optical behavior. A combination of electron‐optical techniques is applied to correlate such properties with the morphology and structure of quantum dots in the InGaAs system. TEM techniques, e.g. imaging by conventional diffraction contrast, by high‐resolution TEM and by energy filtering (EFTEM) are focused on the determination of parameters, like shape and size of islands, their chemical composition and the complex lattice strain fields. An image contrast analysis in terms of shape and strain demands the application of image simulation techniques based on the dynamical theory and on structure models refined by molecular dynamics or molecular static energy minimization.