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High Resolution Transmission Electron Microscopy of Grain Boundaries between Hexagonal Boron Nitride Grains in Si 3 N 4 —SiC Particulate Composites
Author(s) -
Knowles K.M.,
Turan S.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200007)35:6/7<751::aid-crat751>3.0.co;2-r
Subject(s) - materials science , grain boundary , transmission electron microscopy , hexagonal boron nitride , intergranular corrosion , boron nitride , electron microscope , composite material , nitride , hexagonal crystal system , high resolution transmission electron microscopy , condensed matter physics , crystallography , microstructure , nanotechnology , optics , chemistry , graphene , physics , layer (electronics)
High resolution transmission electron microscope observations of grain boundaries in hexagonal boron nitride in which adjacent grains are rotated with respect to one another about either <2‐1‐10> or <10‐10> directions are shown to be free of intergranular glass, in agreement with previous work. The implication of these observations is that the solid‐solid boundary energies of such grain boundaries in hexagonal boron nitride are relatively small in magnitude.