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Current Density‐Voltage and Capacitance‐Voltage Characteristics of Local p‐n Junction Structures in CuInSe 2 Single Crystals
Author(s) -
Hernandez E.,
Romero A.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200003)35:3<315::aid-crat315>3.0.co;2-p
Subject(s) - capacitance , electric field , voltage , indium , current (fluid) , current density , materials science , condensed matter physics , space charge , analytical chemistry (journal) , electric current , optoelectronics , chemistry , electrical engineering , electrode , physics , electron , quantum mechanics , chromatography , engineering
Local p‐n junction were obtained under room temperature conditions in CuInSe2 by applying strong electric field through small indium and copper contacts. The current density voltage (J‐V) and the capacitance‐voltage (C‐V) of three different samples were measured at room temperature. The J‐V method shows that the current is dominated by the drift component of the injected carriers. The C‐V method gave a barrier height of 1.04 eV for all three samples which agrees with the reported energy gap of this material. Analysis of these results indicate that the p‐n junction structures formed by strong electric fields are hihgly compensated and the current transport is dominated by the space charge limited current effect.