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MOVPE Growth and Characterisation of Zn‐Doped (GaIn)P Layers with Respect to Surface Structure and Ordering
Author(s) -
Pietzonka I.,
Sass T.,
Benndorf G.,
Franzheld R.,
Gottschalch V.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200003)35:3<271::aid-crat271>3.0.co;2-l
Subject(s) - metalorganic vapour phase epitaxy , misorientation , doping , epitaxy , materials science , morphology (biology) , analytical chemistry (journal) , crystallography , nanotechnology , chemistry , microstructure , optoelectronics , grain boundary , layer (electronics) , metallurgy , chromatography , biology , genetics
(GaIn)P grown on (001)GaAs substrates by metal‐organic vapour phase epitaxy (MOVPE) is highly ordered material. In this work the effect of Zn doping on the epitaxial crystal growth, the ordering behaviour and the surface morphology is investigated. Zn‐doped (GaIn)P layers, grown with phosphine (PH 3 ), tertiarybutylphosphine (TBP) and ditertiarybutylphosphine (DitBuPH) as phosphorous precursors, reveal a strong drop of the binary growth rate of InP r InP with increasing Zn/III ratio, whereas r GaP remains nearly constant. The Zn doping efficiency and the ordering behaviour are observed to be dependent on the misorientation of the substrates. Finally, the surface morphology as a function of the different parameters was analysed by atomic force microscopy (AFM), and no considerable change of the growth mechanism was found for Zn‐doped layers in comparison to undoped layers.