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Annealing Behaviour of Deuterium in Silicon Doped Carbon Films
Author(s) -
Likonen J.,
VainAhlgren E.,
Ahlgren T.,
Lehto S.,
Sajavaara T.,
Rydman W.,
Kein J.,
Katainen J.,
Wu C.H.
Publication year - 2002
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/1521-3986(200204)42:2/4<445::aid-ctpp445>3.0.co;2-p
Subject(s) - elastic recoil detection , deuterium , materials science , annealing (glass) , silicon , analytical chemistry (journal) , doping , ion , recoil , nuclear reaction analysis , mass spectrometry , secondary ion mass spectrometry , diffusion , carbon fibers , trapping , atomic physics , thin film , nanotechnology , optoelectronics , chemistry , composite material , thermodynamics , physics , organic chemistry , chromatography , ecology , biology , composite number
Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.