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Materials Processing Using an Atmospheric Pressure, RF‐Generated Plasma Source
Author(s) -
Selwyn G.S.,
Herrmann H.W.,
Park J.,
Henins I.
Publication year - 2001
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/1521-3986(200111)41:6<610::aid-ctpp610>3.0.co;2-l
Subject(s) - plasma , atmospheric pressure plasma , materials science , atmospheric pressure , plasma processing , compatibility (geochemistry) , ion , process engineering , nanotechnology , composite material , chemistry , physics , meteorology , nuclear physics , organic chemistry , engineering
Processing materials at atmospheric pressure provides clear advantages over traditional, vacuum‐based plasma processing: in addition to reduction in the capital cost of equipment and the elimination of constraints imposed by vacuum‐compatibility, high pressure and low temperature plasma processes offer unprecedented improvements for generation of active chemical species, high chemical selectivity, minimal ion densities resulting in low surface damage and surface treatment methods unattainable by other means. We describe several variations of this unique plasma source and some of its potential applications.