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Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy
Author(s) -
Potin V.,
Rosenauer A.,
Gerthsen D.,
Kuhn B.,
Scholz F.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<947::aid-pssb947>3.0.co;2-p
Subject(s) - transmission electron microscopy , materials science , nanometre , morphology (biology) , indium , layer (electronics) , electron microscope , chemical vapor deposition , resolution (logic) , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , optics , composite material , physics , chromatography , genetics , artificial intelligence , computer science , biology
We have compared and analysed the morphology of capped and uncapped thin InGaN layers by transmission electron microscopy. The samples were grown under the same conditions by metal‐organic chemical vapour deposition. The capped layer appears to be homogenous in thickness whereas the uncapped one is characterized by the presence of large islands. Moreover, the In distribution was determined in both samples by quantitative high‐resolution transmission electron microscopy. The average indium concentration was found to be comparable. Fluctuations of the In concentration on a large scale occur in both cases whereas fluctuations on a scale of a few nanometers are more pronounced in the capped layer.