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Microstructural Investigation and Magnetic Properties of p‐type GaN Implanted with Mn + Ions
Author(s) -
Baik J.M.,
Kim J.K.,
Jang H.W.,
Shon Y.,
Kang T.W.,
Lee J.L.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<943::aid-pssb943>3.0.co;2-4
Subject(s) - annealing (glass) , ferromagnetism , materials science , ion , magnetization , analytical chemistry (journal) , magnetic semiconductor , ion implantation , nuclear magnetic resonance , condensed matter physics , metallurgy , chemistry , magnetic field , physics , chromatography , quantum mechanics , organic chemistry
In p‐type GaN implanted with 5 × 10 16 cm —2 dose of Mn + ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 °C was stronger than the one at 900 °C, because of the predominant reaction of Mn with N atoms at 900 °C and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn‐implanted p‐type GaN can be enhanced by optimising annealing temperature (< 900 °C).