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Controlling the Morphology of GaN Layers Grown on AlN in Ga Self‐Surfactant Conditions: from Quantum Wells to Quantum Dots
Author(s) -
Adelmann C.,
Daudin B.,
Monroy E.,
Sarigiannidou E.,
Rouvière J.L.,
Hori Y.,
Brault J.,
Gogneau N.,
Fanget S.,
BruChevallier C.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<931::aid-pssb931>3.0.co;2-g
Subject(s) - molecular beam epitaxy , quantum dot , materials science , morphology (biology) , quantum well , pulmonary surfactant , optoelectronics , nanotechnology , epitaxy , condensed matter physics , chemistry , optics , physics , layer (electronics) , laser , biology , genetics , biochemistry
We show that the growth mode of GaN deposited by plasma‐assisted molecular beam epitaxy on AlN can be controlled by tuning Ga/N ratio. This enables to grow either quantum dots (Ga/N < 1) or quantum wells (Ga/N ≫ 1). The inhibition of 2D/3D transition results from a decrease in effective mismatch induced by the presence of a continuous Ga film on growing GaN surface in Ga‐rich conditions.