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Optical Properties of RF‐MBE Grown AlGaAsN
Author(s) -
Yamamoto K.,
Uchida M.,
Yamamoto A.,
Masuda A.,
Hashimoto A.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<915::aid-pssb915>3.0.co;2-8
Subject(s) - raman spectroscopy , raman scattering , infrared , materials science , spectral line , lattice (music) , absorption (acoustics) , infrared spectroscopy , absorption spectroscopy , molecular physics , analytical chemistry (journal) , chemistry , optics , physics , organic chemistry , chromatography , astronomy , acoustics , composite material
Raman scattering and infrared absorption properties of RF‐MBE grown AlGaAsN layers have been reported in order to investigate the microscopic lattice structures related with the nitrogen incorporation. Several new Raman modes of the Al–N bonds have been observed at 449, 500, and 650 cm —1 in the Raman spectra of AlGaAsN (Al: 18–100%, N: ∼2%) instead of the mode of Ga–N bonds. The results strongly indicated that most of the N atoms form the Al–N bonds in the AlGaAsN layers. The infrared absorption spectra of the AlGaAsN have shown clearly that the TO AlN mode appears at 500 cm —1 , instead of the TO GaN mode that appeared at 469 cm —1 in GaAsN. The peak shift and the broadening of the absorption peak of the TO AlN mode will be discussed in terms of variation of the statistical distributions of the Al n Ga 4— n N ( n = 0, 1, 2, 3, 4) tetrahedral unit structures with increasing the Al amount.