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Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains
Author(s) -
Haboeck U.,
Kaschner A.,
Hoffmann A.,
Thomsen C.,
Riemann T.,
Krtschil A.,
Christen J.,
Krost A.,
Seyboth M.,
Habel F.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<911::aid-pssb911>3.0.co;2-o
Subject(s) - cathodoluminescence , materials science , luminescence , raman spectroscopy , epitaxy , microscopy , optoelectronics , analytical chemistry (journal) , layer (electronics) , optics , nanotechnology , chemistry , physics , chromatography
We have carried out spatially resolved micro‐Raman spectroscopy, cathodoluminescence microscopy and scanning capacitance microscopy in order to obtain a comprehensive understanding about the properties of different domains formed in epitaxial laterally‐overgrown GaN. For this purpose a spherical pit was fabricated into the sample by mechanical grinding and polishing, penetrating through to the buffer layer at its center. We found areas showing sharp excitonic luminescence corresponding to local free‐carrier concentrations n below 10 17 cm —3 as well as domains exhibiting broad luminescence originating from recombination of a doping plasma with n reaching 10 19 cm —3 . Simultaneously, we observed in the scanning microscopy investigations a substructure which could be explained by the existence of internal space charge regions.