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k · p Calculations of Electronic and Optical Properties of p‐doped (001) AlGaN/GaN Thin Superlattices
Author(s) -
Rodrigues S.C.P.,
Scolfaro L.M.R.,
Sipahi G.M.,
Noriega O.C.,
Leite J.R.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<906::aid-pssb906>3.0.co;2-8
Subject(s) - superlattice , effective mass (spring–mass system) , doping , hamiltonian (control theory) , photoluminescence , materials science , condensed matter physics , acceptor , optoelectronics , physics , quantum mechanics , mathematics , mathematical optimization
In this work we present theoretical photoluminescence (PL) and absorption spectra as calculated for modulation p‐doped (001) AlGaN/GaN thin superlattices (SLs). We apply a self‐consistent k · p method, in the framework of the effective‐mass theory, which solves the full 8 × 8 Kane Hamiltonian, in conjunction with the Poisson equation in order to calculate the electronic and optical properties of these systems. The trends in the calculated Stokes shift, due to many‐body effects within the quasi‐two‐dimensional hole gas (2DHG), are analysed as a function of the acceptor doping concentration. The in‐plane hole effective mass for the first occupied energy level in the systems is predicted.