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Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN‐on‐Sapphire
Author(s) -
Rimeika R.,
Ciplys D.,
Shur M.S.,
Gaska R.,
Khan M.A.,
Yang J.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<897::aid-pssb897>3.0.co;2-9
Subject(s) - sapphire , materials science , surface acoustic wave , attenuation coefficient , electromechanical coupling coefficient , attenuation , coupling (piping) , coupling coefficient of resonators , layer (electronics) , range (aeronautics) , surface (topology) , acoustics , optics , optoelectronics , composite material , physics , resonator , laser , ceramic , geometry , mathematics
The electromechanical coupling coefficient for surface acoustic waves propagating in GaN‐on‐sapphire structure has been evaluated using in situ measurements of the SAW attenuation during the evaporation of a metal film on the GaN surface. The extracted values for samples with GaN layer thicknesses of 2.2–2.4 μm were in the range of 0.06–0.09% at SAW frequencies of 200–300 MHz.