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Growth of Al x Ga 1—x N and Mg‐Doped GaN Epilayers on Ga‐ and N‐Faces of Bulk GaN Single Crystal Substrates by Molecular‐Beam Epitaxy
Author(s) -
Konishi M.,
Tanabe T.,
Kubo S.,
Kurai S.,
Taguchi T.,
Kainosho K.,
Yokohata A.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<855::aid-pssb855>3.0.co;2-x
Subject(s) - molecular beam epitaxy , materials science , doping , crystallinity , optoelectronics , crystal (programming language) , epitaxy , full width at half maximum , diffraction , wide bandgap semiconductor , optics , nanotechnology , layer (electronics) , physics , computer science , composite material , programming language
AlGaN and Mg‐doped GaN epilayers were grown by radio‐frequency molecular beam epitaxy on both polar faces of bulk GaN single crystals with single polar domain, which were prepared by the pressure‐controlled solution growth method. AlGaN epilayers on Ga‐faces of bulk GaN substrates exhibited higher Al composition and narrower full‐width at half maximum of 2 θ — ω X‐ray diffraction than those values obtained for AlGaN epilayers on N‐faces at the same growth condition. P‐type conduction was only achieved in Mg‐doped GaN on Ga‐faces of bulk GaN substrates without any post‐treatments. These results indicate that the growth on Ga‐faces (or with Ga‐polarity) is more favourable for device fabrication even using high‐crystallinity bulk GaN substrates.