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Intentional Control of n‐type Conduction for Si‐doped AlN and Al x Ga 1—x N with High Al Content
Author(s) -
Taniyasu Y.,
Kasu M.,
Kobayashi N.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<845::aid-pssb845>3.0.co;2-0
Subject(s) - doping , dopant , materials science , thermal conduction , silicon , content (measure theory) , analytical chemistry (journal) , ionization , energy density , optoelectronics , chemistry , ion , engineering physics , composite material , physics , mathematical analysis , chromatography , mathematics , organic chemistry
N‐type conductive Si‐doped AlN and Al x Ga 1— x N with high Al content have been obtained by intentionally controlling the Si dopant density [Si]. Self‐compensation plays an important role at higher [Si] and determines the upper doping limit of Si. The Si‐doped AlN showed n‐type conduction when [Si] was less than 3 × 10 19 cm —3 . When [Si] was more than 3 × 10 19 cm —3 , it became highly resistive due to the self‐compensation of Si donors. For x > 0.49, the ionization energy of Si donors increased sharply with increasing Al content. This resulted in a sharp decrease in the highest obtainable electron concentration with increasing Al content for the Si‐doped Al x Ga 1— x N.