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Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands
Author(s) -
Link A.,
Graf T.,
Ambacher O.,
Jimenez A.,
Calleja E.,
Smorchkova Y.,
Speck J.,
Mishra U.,
Stutzmann M.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<805::aid-pssb805>3.0.co;2-g
Subject(s) - heterojunction , condensed matter physics , electron , shubnikov–de haas effect , scattering , quantum well , spin (aerodynamics) , materials science , semiconductor , fermi gas , physics , optoelectronics , quantum oscillations , optics , laser , quantum mechanics , thermodynamics
To study the electronic transport properties of two‐dimensional electron gases confined at the interfaces of AlGaN/GaN heterostructures, Shubnikov–de Haas (SdH) and Hall measurements were performed with structures covering a wide range of sheet carrier concentrations from 2.25 × 10 12 to 1.83 × 10 13 cm —2 . For samples with sheet carrier concentrations above 1.7 × 10 13 cm —2 , the occupation of a second subband was observed. Fourier transformation was used to separate the contributions of both occupied subbands to the electronic transport. Quite similar quantum scattering times and effective masses of the electrons in the first and second subband were determined. In samples with lower sheet carrier concentration traces of a spin splitting could be found by investigating the angle dependence of the SdH‐oscillations.