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Structure Analysis of InN Film Using Extended X‐Ray Absorption Fine Structure Method
Author(s) -
Miyajima T.,
Kudo Y.,
Liu K.L.,
Uruga T.,
Honma T.,
Saito Y.,
Hori M.,
Nanishi Y.,
Kobayashi T.,
Hirata S.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<801::aid-pssb801>3.0.co;2-w
Subject(s) - extended x ray absorption fine structure , bond length , lattice constant , diffraction , band gap , absorption (acoustics) , materials science , electronic structure , range (aeronautics) , lattice (music) , electronic band structure , crystal structure , crystallography , atomic physics , chemistry , absorption spectroscopy , condensed matter physics , optics , optoelectronics , physics , computational chemistry , acoustics , composite material
We investigated the local atomic structure around In atoms of MBE‐grown InN which has a direct bandgap energy of 0.8 eV, using extended X‐ray absorption fine structure (EXAFS) oscillation of In K‐edge. The signals from the first‐nearest neighbor atoms (N) and second‐nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In–N and In–In was estimated to be d In–N = 0.215 nm and d In–In = 0.353 nm, respectively. The In–N bond length of d In–In = 0.353 nm was closed to the a ‐axis lattice constant of a = 0.3536 nm, which was determined using X‐ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few Å around In atoms.