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Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF‐MBE
Author(s) -
Saito Y.,
Harima H.,
Kurimoto E.,
Yamaguchi T.,
Teraguchi N.,
Suzuki A.,
Araki T.,
Nanishi Y.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<796::aid-pssb796>3.0.co;2-h
Subject(s) - indium nitride , full width at half maximum , materials science , raman spectroscopy , indium , nitride , band gap , molecular beam epitaxy , luminescence , optoelectronics , analytical chemistry (journal) , chemistry , optics , epitaxy , nanotechnology , physics , layer (electronics) , chromatography
We have investigated the growth temperature dependence of InN crystalline quality grown by RF‐MBE. It was confirmed that the crystalline quality improved by increasing the growth temperature within the dissociation limit of InN. We obtained FWHM as narrow as 3.7 cm —1 for E 2 (high frequency) phonon mode peak of Raman spectroscopy and 24 meV for the band‐edge luminescence at 77 K. These values prove excellent quality of our samples. In this study, we obtained optical band‐gap energy of around 0.8 eV at room temperature from the high‐quality InN samples.