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Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE
Author(s) -
Sanorpim S.,
Nakajima F.,
Imura S.,
Katayama R.,
Wu J.,
Onabe K.,
Shiraki Y.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<782::aid-pssb782>3.0.co;2-0
Subject(s) - metalorganic vapour phase epitaxy , photoluminescence , materials science , band gap , spontaneous emission , exciton , epitaxy , optoelectronics , excitation , alloy , thin film , molecular beam epitaxy , atmospheric temperature range , radiative transfer , analytical chemistry (journal) , condensed matter physics , chemistry , optics , nanotechnology , laser , physics , layer (electronics) , quantum mechanics , chromatography , meteorology , composite material
Reported here are some results of temperature and excitation power dependences of photoluminescence (PL) from the InGaAs(N) (In = 10.5%, 17.0% and N = 0–2.3%) alloy films grown at 530 °C and 600 °C by metalorganic vapour phase epitaxy (MOVPE). The InGaAs(N) alloy films emitting at room temperature in the wavelength ( λ ) range of 0.97–1.23 μm have been investigated. The low‐temperature PL spectra in this set of samples are dominated by multiple peak emissions associated with both near‐band‐edge emission of InGaAs(N) (high energy peak, E PH ) and strongly localized states (lower energy peaks, E PL ) much lower than the InGaAs(N) band‐gap. The temperature dependence of integrated PL intensity indicates the presence of non‐radiative recombination centers with the localization energy ( E loc = 9.4–25.8 meV), which increased with increasing N concentration. Here we noted that E loc are in agreement with the energy difference of E PH and E PL peaks. The α values extracted from the relation I PL ∝ I α ex are used to examine the recombination process. In the N‐containing layers it is demonstrated that free‐excitons, not free‐carriers, mainly govern the radiative recombination.