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Modelling of Polarization Charge‐Induced Asymmetry of I–V Characteristics of AlN/GaN‐Based Resonant Tunnelling Structures
Author(s) -
Indlekofer K.M.,
Donà E.,
Malindretos J.,
Bertelli M.,
Kočan M.,
Rizzi A.,
Lüth H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<769::aid-pssb769>3.0.co;2-h
Subject(s) - asymmetry , quantum tunnelling , polarization (electrochemistry) , diode , optoelectronics , materials science , condensed matter physics , voltage , light emitting diode , physics , chemistry , quantum mechanics
Numerical simulations of AlN/GaN‐based resonant tunnelling diode structures are presented, employing self‐consistent real‐time Green's functions. The simulated current–voltage characteristics show strong asymmetry effects due to polarization charges at the heterointerfaces in the double‐barrier region.