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Optical Properties of In x Ga 1—x N with Entire Alloy Composition on InN Buffer Layer Grown by RF‐MBE
Author(s) -
Hori M.,
Kano K.,
Yamaguchi T.,
Saito Y.,
Araki T.,
Nanishi Y.,
Teraguchi N.,
Suzuki A.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<750::aid-pssb750>3.0.co;2-k
Subject(s) - cathodoluminescence , photoluminescence , materials science , alloy , absorption (acoustics) , absorption edge , layer (electronics) , band gap , luminescence , optoelectronics , bowing , analytical chemistry (journal) , chemistry , nanotechnology , metallurgy , composite material , philosophy , theology , chromatography
Optical characterization of In x Ga 1— x N layers was done by photoluminescence, cathodoluminescence and optical absorption measurements. PL emissions less than 1.9 eV were observed from In x Ga 1— x N films with x > 0.53 that showed no phase separation. A bowing parameter of 2.3 eV was obtained from the relationship between PL emission energy and alloy composition. Absorption edge dependence on In composition was similar to the luminescence peak dependence on In composition. These optical properties indicate that the bandgap energy of InN is below 1.0 eV.