In‐Redistribution in a GaInN Quantum Well upon Thermal Annealing | Zendy

Hahn E. | Zendy; Rosenauer A. | Zendy; Gerthsen D. | Zendy; Off J. | Zendy; PerezSolorzano V. | Zendy; Jetter M. | Zendy; Scholz F. | Zendy

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In‐Redistribution in a GaInN Quantum Well upon Thermal Annealing

Author(s) -

Hahn E.,

Rosenauer A.,

Gerthsen D.,

Off J.,

PerezSolorzano V.,

Jetter M.,

Scholz F.

Publication year - 2002

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/1521-3951(200212)234:3<738::aid-pssb738>3.0.co;2-x

Subject(s) - photoluminescence , metalorganic vapour phase epitaxy , annealing (glass) , materials science , transmission electron microscopy , chemical vapor deposition , redistribution (election) , spectroscopy , analytical chemistry (journal) , optoelectronics , epitaxy , nanotechnology , chemistry , metallurgy , physics , layer (electronics) , quantum mechanics , chromatography , politics , political science , law

A GaInN quantum‐well structure with an average In‐concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before and after an one‐hour annealing treatment at 980 °C. Due to the heat treatment, the formation of In‐rich clusters with extensions between 10 nm and 100 nm and In‐concentrations above 80% was observed. Nevertheless, the PL exhibits a blue shift in the PL‐peak energy of about 90 meV compared to the as‐grown sample and do not show a significant influence of the In‐rich clusters on the emission wavelength.

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