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In‐Redistribution in a GaInN Quantum Well upon Thermal Annealing
Author(s) -
Hahn E.,
Rosenauer A.,
Gerthsen D.,
Off J.,
PerezSolorzano V.,
Jetter M.,
Scholz F.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<738::aid-pssb738>3.0.co;2-x
Subject(s) - photoluminescence , metalorganic vapour phase epitaxy , annealing (glass) , materials science , transmission electron microscopy , chemical vapor deposition , redistribution (election) , spectroscopy , analytical chemistry (journal) , optoelectronics , epitaxy , nanotechnology , chemistry , metallurgy , physics , layer (electronics) , quantum mechanics , chromatography , politics , political science , law
Abstract A GaInN quantum‐well structure with an average In‐concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before and after an one‐hour annealing treatment at 980 °C. Due to the heat treatment, the formation of In‐rich clusters with extensions between 10 nm and 100 nm and In‐concentrations above 80% was observed. Nevertheless, the PL exhibits a blue shift in the PL‐peak energy of about 90 meV compared to the as‐grown sample and do not show a significant influence of the In‐rich clusters on the emission wavelength.