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Exciton Confinement in GaN/AlGaN Quantum Wells Enhanced by Non‐Abrupt Interfaces
Author(s) -
Caetano E.W.S.,
Freire V.N.,
Farias G.A.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200212)234:3<730::aid-pssb730>3.0.co;2-s
Subject(s) - wurtzite crystal structure , exciton , quantum well , condensed matter physics , materials science , blueshift , quantum dot , phase (matter) , optoelectronics , photoluminescence , physics , optics , quantum mechanics , zinc , laser , metallurgy
We calculate the confinement properties of excitons in wurtzite and zincblende GaN/Al χ Ga 1— χ N quantum wells taking into account the existence of graded interfaces and its effects on the strain and polarizations. The interface related exciton energy blue shift for the wurtzite phase is practically independent of the well width, indicating that this behavior is due to the local graded interface related strain attenuation. For the zincblende phase, the graded interface effects decrease strongly when the well width is larger, resulting in the absence of interface related exciton energy blue shift in the case of wells thicker than 100 Å.